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IPA60R120P7

INCHANGE
Part Number IPA60R120P7
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPA60R120P7 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.12Ω ·Enhancement mode ...
Datasheet PDF File IPA60R120P7 PDF File

IPA60R120P7
IPA60R120P7

Overview
isc N-Channel MOSFET Transistor IPA60R120P7 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.
12Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 26 IDM Drain Current-Single Pulsed 78 PD Total Dissipation @TC=25℃ 28 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case t...


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