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IPA90R1K2C3

INCHANGE
Part Number IPA90R1K2C3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPA90R1K2C3，IIPA90R1K2C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.2Ω ·...
Datasheet PDF File IPA90R1K2C3 PDF File

IPA90R1K2C3
IPA90R1K2C3

Overview
isc N-Channel MOSFET Transistor IPA90R1K2C3，IIPA90R1K2C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.
2Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 5.
1 IDM Drain Current-Single Pulsed 10 PD Total Dissipation @TC=25℃ 31 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBO...


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