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IPA180N10N3

Part Number	IPA180N10N3
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤18mΩ (max)...
Datasheet	IPA180N10N3 PDF File

Overview

isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤18mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·It is intended for general purpose switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 28 IDM Drain Current-Single Pulsed 112 PD Total Dissipation @TC=25℃ 30 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS...

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