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IPD16CN10N

Part Number	IPD16CN10N
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPD16CN10N,IIPD16CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤16mΩ ·Enh...
Datasheet	IPD16CN10N PDF File

Overview

isc N-Channel MOSFET Transistor IPD16CN10N,IIPD16CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤16mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 53 IDM Drain Current-Single Pulsed 212 PD Total Dissipation @TC=25℃ 100 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETE...

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