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IPD036N04LG

Infineon
Part Number IPD036N04LG
Manufacturer Infineon
Description Power-Transistor
Published Oct 8, 2020
Detailed Description Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters •...
Datasheet PDF File IPD036N04LG PDF File

IPD036N04LG
IPD036N04LG

Overview
Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant Type IPD036N04L G • Pb-free plating; RoHS compliant Product Summary V DS R DS(on),max ID IPD036N04L G 40 V 3.
6 mΩ 90 A Package Marking PG-TO252-3 036N04L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=90 A, R GS=25 Ω Value Unit 90 A 87 90 75 400 90 55 mJ ±20 V Rev.
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