DatasheetsPDF.com

IPD50R399CP

INCHANGE
Part Number IPD50R399CP
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤399mΩ ·E...
Datasheet PDF File IPD50R399CP PDF File

IPD50R399CP
IPD50R399CP

Overview
isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤399mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 20 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)