DatasheetsPDF.com

IPD50R800CE

Part Number	IPD50R800CE
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPD50R800CE,IIPD50R800CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤800mΩ ·E...
Datasheet	IPD50R800CE PDF File

Overview

isc N-Channel MOSFET Transistor IPD50R800CE,IIPD50R800CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤800mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.
6 IDM Drain Current-Single Pulsed 15.
5 PD Total Dissipation @TC=25℃ 60 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance ...

Similar Datasheet

IPD50R800CE MOSFET - Infineon
IPD50R800CE N-Channel MOSFET - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)