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IPD053N08N3

Infineon
Part Number IPD053N08N3
Manufacturer Infineon
Description Power-Transistor
Published Oct 8, 2020
Detailed Description IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product ...
Datasheet PDF File IPD053N08N3 PDF File

IPD053N08N3
IPD053N08N3

Overview
IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 V 5.
3 mW 90 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application previous engineering sample code: IPD06CN08N • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPD053N08N3 G Package Marking PG-TO252-3 053N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=90 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value Unit 90 A 90 360 190 mJ ±20 V 150 W -55 .
.
.
175 °C 55/175/56 Rev.
1.
1 page 1 2014-05-19 IPD053N08N3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) min.
Values typ.
Unit max.
- - 1 K/W - - 75 - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 80 Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - V DS=80 V, V GS=0 V, T j=125 °C - Gate-source leakage current I GSS V GS=20 V, V DS=0 V - Drain-source on-state resistance R DS(on) V GS=10 V, I D=90 A - V GS=6 V, I D=45 A - Gate resistance RG - - -V 2.
8 3.
5 0.
1 1 µA 10 100 1 100 nA 4.
4 5.
3 mW 5.
8 9.
5 2.
2 -W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=90 A 56 111 -S 1)J-STD20 and JE...


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