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IPD60R600CP

INCHANGE
Part Number IPD60R600CP
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·En...
Datasheet PDF File IPD60R600CP PDF File

IPD60R600CP
IPD60R600CP

Overview
isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.
1 IDM Drain Current-Single Pulsed 15 PD Total Dissipation @TC=25℃ 60 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 2.
1 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDIT...


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