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IPD60R750E6

Part Number	IPD60R750E6
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPD60R750E6,IIPD60R750E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.75Ω ·E...
Datasheet	IPD60R750E6 PDF File

Overview

isc N-Channel MOSFET Transistor IPD60R750E6,IIPD60R750E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
75Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 5.
7 IDM Drain Current-Single Pulsed 15.
7 PD Total Dissipation @TC=25℃ 48 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case therm...

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