DatasheetsPDF.com

IPD65R950CFD

Part Number	IPD65R950CFD
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPD65R950CFD,IIPD65R950CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω...
Datasheet	IPD65R950CFD PDF File

Overview

isc N-Channel MOSFET Transistor IPD65R950CFD,IIPD65R950CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.
9 IDM Drain Current-Single Pulsed 11 PD Total Dissipation @TC=25℃ 36.
7 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c...

Similar Datasheet

IPD65R950C6 MOSFET - Infineon
IPD65R950C6 N-Channel MOSFET - INCHANGE
IPD65R950CFD MOSFET - Infineon
IPD65R950CFD N-Channel MOSFET - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)