DatasheetsPDF.com

IPD70R2K0CE

INCHANGE
Part Number IPD70R2K0CE
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPD70R2K0CE,IIPD70R2K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enha...
Datasheet PDF File IPD70R2K0CE PDF File

IPD70R2K0CE
IPD70R2K0CE

Overview
isc N-Channel MOSFET Transistor IPD70R2K0CE,IIPD70R2K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 700 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 6.
3 PD Total Dissipation @TC=25℃ 42 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)