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IPD80R1K0CE

INCHANGE
Part Number IPD80R1K0CE
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·...
Datasheet PDF File IPD80R1K0CE PDF File

IPD80R1K0CE
IPD80R1K0CE

Overview
isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 5.
7 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case therma...


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