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IPD096N08N3

Infineon
Part Number IPD096N08N3
Manufacturer Infineon
Description Power-Transistor
Published Oct 8, 2020
Detailed Description OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters ...
Datasheet PDF File IPD096N08N3 PDF File

IPD096N08N3
IPD096N08N3

Overview
OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPD096N08N3 G IPD096N08N3 G Product Summary VDS RDS(on),max ID 80 V 9.
6 mW 73 A Package Marking PG-TO252-3 096N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse3...


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