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IPP60R600P7

Part Number	IPP60R600P7
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 10, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPP60R600P7，IIPP60R600P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·...
Datasheet	IPP60R600P7 PDF File

Overview

isc N-Channel MOSFET Transistor IPP60R600P7，IIPP60R600P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 16 PD Total Dissipation @TC=25℃ 30 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERM...

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