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IPP60R750E6

INCHANGE
Part Number IPP60R750E6
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP60R750E6，IIPP60R750E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.75Ω ...
Datasheet PDF File IPP60R750E6 PDF File

IPP60R750E6
IPP60R750E6

Overview
isc N-Channel MOSFET Transistor IPP60R750E6，IIPP60R750E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
75Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 5.
7 IDM Drain Current-Single Pulsed 15.
7 PD Total Dissipation @TC=25℃ 48 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V...


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