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IPP65R065C7

INCHANGE
Part Number IPP65R065C7
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP65R065C7，IIPP65R065C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.065Ω...
Datasheet PDF File IPP65R065C7 PDF File

IPP65R065C7
IPP65R065C7

Overview
isc N-Channel MOSFET Transistor IPP65R065C7，IIPP65R065C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
065Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 33 IDM Drain Current-Single Pulsed 145 PD Total Dissipation @TC=25℃ 171 Tj Max.
Operating Junct...


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