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IPP65R600C6

INCHANGE
Part Number IPP65R600C6
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP65R600C6，IIPP65R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·...
Datasheet PDF File IPP65R600C6 PDF File

IPP65R600C6
IPP65R600C6

Overview
isc N-Channel MOSFET Transistor IPP65R600C6，IIPP65R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.
3 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 63 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃...


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