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IPP90R500C3

INCHANGE
Part Number IPP90R500C3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP90R500C3，IIPP90R500C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.5Ω ·...
Datasheet PDF File IPP90R500C3 PDF File

IPP90R500C3
IPP90R500C3

Overview
isc N-Channel MOSFET Transistor IPP90R500C3，IIPP90R500C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
5Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 156 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBO...


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