DatasheetsPDF.com

IPP111N15N3

INCHANGE
Part Number IPP111N15N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP111N15N3，IIPP111N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11.1mΩ ...
Datasheet PDF File IPP111N15N3 PDF File

IPP111N15N3
IPP111N15N3

Overview
isc N-Channel MOSFET Transistor IPP111N15N3，IIPP111N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11.
1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 83 IDM Drain Current-Single Pulsed 332 PD Total Dissipation @TC=25℃ 214 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTE...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)