DatasheetsPDF.com

IPP410N30N

INCHANGE
Part Number IPP410N30N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP410N30N，IIPP410N30N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤41mΩ ·En...
Datasheet PDF File IPP410N30N PDF File

IPP410N30N
IPP410N30N

Overview
isc N-Channel MOSFET Transistor IPP410N30N，IIPP410N30N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤41mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for hard commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 44 IDM Drain Current-Single Pulsed 176 PD Total Dissipation @TC=25℃ 300 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
5 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP410N30N，IIPP410N30N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =270μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=44A IGSS Gate-Source Leakage Current VGS= 20V;VDS=0V IDSS Drain-Source Leakage Current VDS=240V; VGS= 0V VSD Diode forward voltage IF=44A; VGS = 0V MIN TYP MAX UNIT 300 V 2 4 V 41 mΩ 0.
1 μA 10 μA 1.
2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special ap...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)