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IPP530N15N3

INCHANGE
Part Number IPP530N15N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP530N15N3，IIPP530N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤53mΩ ·E...
Datasheet PDF File IPP530N15N3 PDF File

IPP530N15N3
IPP530N15N3

Overview
isc N-Channel MOSFET Transistor IPP530N15N3，IIPP530N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤53mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 21 IDM Drain Current-Single Pulsed 84 PD Total Dissipation @TC=25℃ 68 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERIST...


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