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IRF200B211

International Rectifier
Part Number IRF200B211
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 11, 2020
Detailed Description Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-brid...
Datasheet PDF File IRF200B211 PDF File

IRF200B211
IRF200B211


Overview
Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  DC/DC and AC/DC converters  DC/AC Inverters StrongIRFET™ IRF200B211 HEXFET® Power MOSFET D VDSS 200V RDS(on) typ.
135m G max 170m S ID (Silicon Limited) 12A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free*RoHS Compliant, Halogen-Free G Gate GDS TO-220AB IRF200B211 D Drain S Source Base part number Package Type IRF200B211 TO-220 Standard Pack Form Quantity Tube 50 Orderable Part Number IRF200B211 RDS(on), Drain-to -Source On Resistance (m ) ID, Drain Current (A) 500 450 ID = 7.
2A 400 350 TJ = 125°C 300 250 200 150 TJ = 25°C 100 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1.
Typical On-Resistance vs.
Gate Voltage 1 www.
irf.
com © 2015 International Rectifier 14 12 10 8 6 4 2 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2.
Maximum Drain Current vs.
Case Temperature Submit Datasheet Feedback March 31, 2015 IRF200B211 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS TJ TSTG Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting Torque, 6-32 or M3 Screw Max.
12 9.
0 34 80 0.
53 ± 20 -55 to + 175 300 10 lbf·in (1.
1 N·m) Units A W W/°C V °C Avalanche Characteristics EAS (Thermally limited) EAS (Thermally limited) EAS (tested) IAR EAR Single Pulse Avalanche Energy  Single Pulse Avalanche Energy  Single Pulse Avalanche...


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