DatasheetsPDF.com

IRFB31N20D

Part Number	IRFB31N20D
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFB31N20D，IIRFB31N20D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤82mΩ ·Enh...
Datasheet	IRFB31N20D PDF File

Overview

isc N-Channel MOSFET Transistor IRFB31N20D，IIRFB31N20D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤82mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 124 PD Total Dissipation @TC=25℃ 200 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c)...

Similar Datasheet

IRFB31N20 Power MOSFET - International Rectifier
IRFB31N20D Power MOSFET - International Rectifier
IRFB31N20D N-Channel MOSFET - INCHANGE
IRFB31N20DPBF HEXFET Power MOSFET - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)