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IRFB4510

INCHANGE
Part Number IRFB4510
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 12, 2020
Detailed Description isc N-Channel MOSFET Transistor IRFB4510，IIRFB4510 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.5mΩ ·Enha...
Datasheet PDF File IRFB4510 PDF File

IRFB4510
IRFB4510

Overview
isc N-Channel MOSFET Transistor IRFB4510，IIRFB4510 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.
5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 62 IDM Drain Current-Single Pulsed 250 PD Total Dissipation @TC=25℃ 140 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.
05 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified...


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