DatasheetsPDF.com

IRFB5615

Part Number	IRFB5615
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFB5615，IIRFB5615 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤39mΩ ·Enhanc...
Datasheet	IRFB5615 PDF File

Overview

isc N-Channel MOSFET Transistor IRFB5615，IIRFB5615 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤39mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 144 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL ...

Similar Datasheet

IRFB5615 N-Channel MOSFET - INCHANGE
IRFB5615PbF Digital Audio MOSFET - International Rectifier
IRFB5620 N-Channel MOSFET - INCHANGE
IRFB5620PBF Digital Audio MOSFET - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)