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IRFP3703

Part Number	IRFP3703
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFP3703，IIRFP3703 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.8mΩ ·Enhanc...
Datasheet	IRFP3703 PDF File

Overview

isc N-Channel MOSFET Transistor IRFP3703，IIRFP3703 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.
8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous Rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 210 IDM Drain Current-Single Pulsed 1000 PD Total Dissipation @TC=25℃ 230 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resis...

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