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IRFR18N15D

INCHANGE
Part Number IRFR18N15D
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 12, 2020
Detailed Description isc N-Channel MOSFET Transistor IRFR18N15D, IIRFR18N15D ·FEATURES ·Static drain-source on-resistance: RDS(on)≤125mΩ ·En...
Datasheet PDF File IRFR18N15D PDF File

IRFR18N15D
IRFR18N15D

Overview
isc N-Channel MOSFET Transistor IRFR18N15D, IIRFR18N15D ·FEATURES ·Static drain-source on-resistance: RDS(on)≤125mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 72 PD Total Dissipation @TC=25℃ 110 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.
4 110 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFR18N15D, IIRFR18N15D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CON...


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