DatasheetsPDF.com

IRFR024N

Part Number	IRFR024N
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhanc...
Datasheet	IRFR024N PDF File

Overview

isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 68 PD Total Dissipation @TC=25℃ 45 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a)...

Similar Datasheet

IRFR020 HEXFETR Power MOSFET - International Rectifier
IRFR020 (IRFR020 / IRFU020) Power MOSFET - Vishay Siliconix
IRFR024 HEXFET POWER MOSFET - International Rectifier
IRFR024 Power MOSFET - Vishay Siliconix
IRFR024A Power MOSFET - Samsung
IRFR024N Power MOSFET - IRF
IRFR024N N-Channel MOSFET - INCHANGE
IRFR024NPBF HEXFET Power MOSFET - International Rectifier
IRFR024NPBF N-Channel MOSFET - INCHANGE
IRFR024PBF HEXFET Power MOSFET - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)