DatasheetsPDF.com

UCC21750-Q1

Texas Instruments
Part Number UCC21750-Q1
Manufacturer Texas Instruments
Description 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver
Published Oct 13, 2020
Detailed Description UCC21750-Q1 SLUSDH9C – SEPTEMBER 2019 – REVISED JANUARY 2023 UCC21750-Q1 10-A Source/Sink Reinforced Isolated Single Cha...
Datasheet PDF File UCC21750-Q1 PDF File

UCC21750-Q1
UCC21750-Q1


Overview
UCC21750-Q1 SLUSDH9C – SEPTEMBER 2019 – REVISED JANUARY 2023 UCC21750-Q1 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI 1 Features • 5.
7-kVRMS single channel isolated gate driver • AEC-Q100 qualified for automotive applications – Device temperature grade 0: -40°C to +150°C ambient operating temperature range – Device HBM ESD classification level 3A – Device CDM ESD classification level C6 • SiC MOSFETs and IGBTs up to 2121Vpk • 33-V maximum output drive voltage (VDD – VEE) • ±10-A drive strength and split output • 150-V/ns minimum CMTI • 200-ns response time fast DESAT protection • 4-A Internal active miller clamp • 400-mA soft turn-off when fault happens • Isolated analog sensor with PWM output for – Temperature sensing with NTC, PTC or thermal diode – High voltage DC-link or phase voltage • Alarm FLT on overcurrent and reset from RST/EN • Fast enable and disable response on RST/EN • Reject < 40-ns noise transient and pulse on input pins • 12-V VDD UVLO with power good on RDY • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew • SOIC-16 DW package with creepage and clearance distance > 8 mm • Operating junction temperature –40°C to 150°C • Safety-related certifications: – Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17) – UL 1577 component recognition program 2 Applications • Traction inverter for EVs • On-board charger and charging pile • DC/DC converter for HEV/EVs 3 Description The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness.
The UCC21750-Q1 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.
5...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)