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IRFR4510

INCHANGE
Part Number IRFR4510
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 13, 2020
Detailed Description isc N-Channel MOSFET Transistor IRFR4510, IIRFR4510 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.9mΩ ·Enha...
Datasheet PDF File IRFR4510 PDF File

IRFR4510
IRFR4510

Overview
isc N-Channel MOSFET Transistor IRFR4510, IIRFR4510 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.
9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 63 IDM Drain Current-Single Pulsed 252 PD Total Dissipation @TC=25℃ 143 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal res...


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