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IRFR8314

INCHANGE
Part Number IRFR8314
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 13, 2020
Detailed Description isc N-Channel MOSFET Transistor IRFR8314, IIRFR8314 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.2mΩ ·Enhan...
Datasheet PDF File IRFR8314 PDF File

IRFR8314
IRFR8314

Overview
isc N-Channel MOSFET Transistor IRFR8314, IIRFR8314 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.
2mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for UPS/Inverter Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 357 PD Total Dissipation @TC=25℃ 125 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case ...


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