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IRLR3802

INCHANGE
Part Number IRLR3802
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 13, 2020
Detailed Description isc N-Channel MOSFET Transistor IRLR3802, IIRLR3802 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.5mΩ ·Enhan...
Datasheet PDF File IRLR3802 PDF File

IRLR3802
IRLR3802

Overview
isc N-Channel MOSFET Transistor IRLR3802, IIRLR3802 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.
5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 12 VGS Gate-Source Voltage ±12 ID Drain Current-Continuous 84 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 88 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.
7 110 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRLR3802, IIRLR3802 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNI...


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