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IRLR8256

Part Number	IRLR8256
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 13, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRLR8256, IIRLR8256 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.7mΩ ·Enhan...
Datasheet	IRLR8256 PDF File

Overview

isc N-Channel MOSFET Transistor IRLR8256, IIRLR8256 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.
7mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High efficiency ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 25 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 81 IDM Drain Current-Single Pulsed 325 PD Total Dissipation @TC=25℃ 63 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j...

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