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SPD03N50C3

INCHANGE
Part Number SPD03N50C3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 13, 2020
Detailed Description isc N-Channel MOSFET Transistor SPD03N50C3, ISPD03N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enh...
Datasheet PDF File SPD03N50C3 PDF File

SPD03N50C3
SPD03N50C3

Overview
isc N-Channel MOSFET Transistor SPD03N50C3, ISPD03N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.
4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 560 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.
2 IDM Drain Current-Single Pulsed 9.
6 PD Total Dissipation @TC=25℃ 38 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal res...


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