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SPD04N60S5

Part Number	SPD04N60S5
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 13, 2020
Detailed Description	isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·En...
Datasheet	SPD04N60S5 PDF File

Overview

isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4.
5 IDM Drain Current-Single Pulsed 9 PD Total Dissipation @TC=25℃ 50 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resis...

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