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SPP03N60C3

INCHANGE
Part Number SPP03N60C3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 14, 2020
Detailed Description isc N-Channel MOSFET Transistor SPP03N60C3，ISPP03N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.4Ω ·En...
Datasheet PDF File SPP03N60C3 PDF File

SPP03N60C3
SPP03N60C3

Overview
isc N-Channel MOSFET Transistor SPP03N60C3，ISPP03N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.
4Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·Ultra low current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.
2 IDM Drain Current-Single Pulsed 9.
6 PD Total Dissipation @TC=25℃ 38 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.
3 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor SPP03N60C3，ISPP03N60C3 ELECTRICAL CH...


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