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SPP07N60S5

Part Number	SPP07N60S5
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 14, 2020
Detailed Description	isc N-Channel MOSFET Transistor SPP07N60S5，ISPP07N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·En...
Datasheet	SPP07N60S5 PDF File

Overview

isc N-Channel MOSFET Transistor SPP07N60S5，ISPP07N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.
3 IDM Drain Current-Single Pulsed 14.
6 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THE...

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