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SPP24N60C3

INCHANGE
Part Number SPP24N60C3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 14, 2020
Detailed Description isc N-Channel MOSFET Transistor SPP24N60C3，ISPP24N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.16Ω ·E...
Datasheet PDF File SPP24N60C3 PDF File

SPP24N60C3
SPP24N60C3

Overview
isc N-Channel MOSFET Transistor SPP24N60C3，ISPP24N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
16Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION · Ultra low gate charge · Ultra low effective capacitance · Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 24.
3 IDM Drain Current-Single Pulsed 72.
9 PD Total Dissipation @TC=25℃ 240 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ...


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