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SPW20N60CFD

Part Number	SPW20N60CFD
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 14, 2020
Detailed Description	isc N-Channel MOSFET Transistor SPW20N60CFD, ISPW20N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤220mΩ ·...
Datasheet	SPW20N60CFD PDF File

Overview

isc N-Channel MOSFET Transistor SPW20N60CFD, ISPW20N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤220mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.
7 IDM Drain Current-Single Pulsed 52 PD Total Dissipation @TC=25℃ 208 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case the...

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