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SiHF22N65E

Vishay
Part Number SiHF22N65E
Manufacturer Vishay
Description Power MOSFET
Published Oct 15, 2020
Detailed Description www.vishay.com SiHF22N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at ...
Datasheet PDF File SiHF22N65E PDF File

SiHF22N65E
SiHF22N65E

Overview
www.
vishay.
com SiHF22N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.
RDS(on) max.
at 25 °C (Ω) Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 110 15 32 Single 0.
18 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses Available • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of Available compliance please see www.
vishay.
com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant.
For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFROMATION Package Lead (Pb)-free Lead (Pb)-free and Halogen-free TO-220 FULLPAK SiHF22N65E-E3 SiHF22N65E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dt d TJ = 125 °C Soldering Recommendations (Peak Temperature) c for 10 s VDS VGS ID IDM EAS PD TJ, Tstg dV/dt Notes a.
Repetitive rating; pulse width limited by maximum junction temperature.
b.
VDD = 50 V, starting TJ = 25 °C, L = 28.
2 mH, Rg = 25 Ω, IAS = 7 A.
c.
1.
6 mm from case.
d.
ISD ≤ ID, dI/dt = 100 A/μs, s...


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