DatasheetsPDF.com

8N90A

Part Number	8N90A
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 18, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·DESCRIPTION ·Avalanche rugged technology ·Rugged gate oxide technology ·Lower input ca...
Datasheet	8N90A PDF File

Overview

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Avalanche rugged technology ·Rugged gate oxide technology ·Lower input capacitance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A ID(puls) Pulse Drain Current 32 A Ptot Total Dissipation@TC=25℃ 240 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junc...

Similar Datasheet

8N90 N-Channel MOSFET Transistor - Inchange Semiconductor
8N90 900V N-CHANNEL MOSFET - Unisonic Technologies
8N90-FC N-CHANNEL POWER MOSFET - UTC
8N90A N-Channel MOSFET - INCHANGE
8N90K5 N-channel Power MOSFET - STMicroelectronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)