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BUZ83A

INCHANGE
Part Number BUZ83A
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 18, 2020
Detailed Description isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·SOA is Power Dissip...
Datasheet PDF File BUZ83A PDF File

BUZ83A
BUZ83A

Overview
isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 3.
0Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3.
4 A IDM Drain Current-Single Plused 11 A Ptot Total Dissipation@TC=25℃ 78 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
6 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W BUZ83A is...


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