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BUZ80

Siemens Semiconductor Group
Part Number BUZ80
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 80 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ...
Datasheet PDF File BUZ80 PDF File

BUZ80
BUZ80


Overview
BUZ 80 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 80 VDS 800 V ID 3.
1 A RDS(on) 4Ω Package TO-220 AB Ordering Code C67078-S1309-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3.
1 Unit A ID IDpuls 12.
5 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3.
1 8 mJ ID = 3.
1 A, VDD = 50 V, RGS = 25 Ω L = 62.
4 mH, Tj = 25 °C Gate source voltage Power dissipation 320 VGS Ptot ± 20 100 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resi...



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