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BUZ84A

INCHANGE
Part Number BUZ84A
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 18, 2020
Detailed Description isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) ·SOA is Power Dissip...
Datasheet PDF File BUZ84A PDF File

BUZ84A
BUZ84A

Overview
isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 1.
5Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 6 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
6 ℃/W BUZ84A isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transist...


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