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2N6282

Part Number	2N6282
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Oct 19, 2020
Detailed Description	isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- ...
Datasheet	2N6282 PDF File

Overview

isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 10 Adc ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Complement to type 2N6285 APPLICATIONS ·Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5.
0 V IC Collector Current -Continuous 20 A ICP Collector Current-Peak 40 A IB Base Current 0.
5 A PC Collector Power Dissipation@TC=2...

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