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2T837A

INCHANGE
Part Number 2T837A
Manufacturer INCHANGE
Description PNP Transistor
Published Oct 22, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·With TO-220 p...
Datasheet PDF File 2T837A PDF File

2T837A
2T837A

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·With TO-220 packaging ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A PC Total Power Dissipation@ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2T837A isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -0.
1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage I...


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