DatasheetsPDF.com

3DA98A

INCHANGE
Part Number 3DA98A
Manufacturer INCHANGE
Description NPN Transistor
Published Oct 22, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE>15@IC= 1.5A ·Excellent Safe Operating Area ·M...
Datasheet PDF File 3DA98A PDF File

3DA98A
3DA98A

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE>15@IC= 1.
5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 11 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -55-175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.
1 UNIT ℃/W 3DA98A isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=10mA; IB=0...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)