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BFR182TW

INCHANGE
Part Number BFR182TW
Manufacturer INCHANGE
Description NPN Transistor
Published Oct 22, 2020
Detailed Description isc Silicon NPN RF Transistor DESCRIPTION ·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variation...
Datasheet PDF File BFR182TW PDF File

BFR182TW
BFR182TW

Overview
isc Silicon NPN RF Transistor DESCRIPTION ·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Max.
Junction Temperature 35 mA 200 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BFR182TW isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFR182TW ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified, Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.
1 μA IEBO Emitter Cutoff Current VEB= 1V;...


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