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BU941ZL

Part Number	BU941ZL
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Oct 22, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·...
Datasheet	BU941ZL PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electric ignitions ABSOLUTE MAXIMUM RATINGS (T =25 aB B ℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VBEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-Peak PC Collector Power Dissipation @ TBCB=25℃ T JB B Junction Temperature 5 A 155 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT RBth j-cB Thermal Resistance, Junction to Case 0.
97 ℃/W BU941ZL isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS T CB B =25℃ unless otherwise specified SYMBOL PARAMETER ...

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